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Semiconductor chip and production processes has adhesive-free three layer metallization with aluminum layer, diffusion blocking layer and diffusion solder layer

机译:半导体芯片和生产工艺具有铝层,扩散阻挡层和扩散焊料层的无粘合剂三层金属化层

摘要

A semiconductor chip (1) comprises an adhesion layer -free three layer metallization comprising an aluminum layer (4) directly on the chip, followed by a diffusion-blocking layer (5) and directly, by a solder layer (6). The diffusion-blocking layer comprises titanium, nickel, platinum or chromium and the solder layer comprises diffusion solder. All three layers are applied by sputtering. Independent claims are also included for production processes for the above chip.
机译:半导体芯片(1)包括无粘附层的三层金属化层,该三层金属层包括直接在芯片上的铝层(4),然后是扩散阻挡层(5),并且直接是焊料层(6)。扩散阻挡层包括钛,镍,铂或铬,并且焊料层包括扩散焊料。所有三层均通过溅射施加。对于上述芯片的生产过程也包括独立权利要求。

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