Semiconductor component with flip-chip contacts, has flip-chip contacts arranged on contact surfaces of upper metallization layer

摘要

A semiconductor component with flip-chip contacts (2) has a wiring structure (3) with metallization layers (5) between which are arranged dielectric insulation layers (6) of 'low-k material' (7), whose relative dielectric constant is lower than the relative dielectric constant of silicon oxide, and in which the flip-chip contacts (2) are arranged on the contact surfaces/pads of an upper metallization layer (5) and have a polymer core surrounded by a lead-free solder material. An independent claim is included for the production of a semiconductor component with flip-chip contacts.