首页> 外国专利> Compensation unit e.g. field effect transistor, has compensation field extended parallel to connection direction between electrodes, where field has tapered cross sectional surface in direction of drain electrode

Compensation unit e.g. field effect transistor, has compensation field extended parallel to connection direction between electrodes, where field has tapered cross sectional surface in direction of drain electrode

机译:补偿单位场效应晶体管,具有平行于电极之间的连接方向延伸的补偿场,其中该场在漏极方向上具有逐渐减小的横截面

摘要

The unit has body and drift zones (3, 2) extended between gate, source and drain electrodes (G,S,D) having respective zones. The body zone is provided adjacent to the electrodes (G, S). The drift zone is laid between the body zone and one of the zones of the electrodes. A compensation field (5) is provided below the body zone, and is formed in a columnar manner. The field with its longitudinal direction is extended parallel to a connection direction between the electrodes, where the field has a tapered cross sectional surface in the direction of the electrode (D).
机译:该单元具有在具有相应区域的栅电极,源电极和漏电极(G,S,D)之间延伸的主体和漂移区(3、2)。身体区域邻近电极(G,S)设置。漂移区位于身体区和电极区之一之间。补偿区域(5)设置在身体区域的下方,并且以圆柱状形成。其纵向方向的场平行于电极之间的连接方向延伸,其中场在电极(D)方向上具有渐缩的横截面。

著录项

  • 公开/公告号DE102006002065A1

    专利类型

  • 公开/公告日2007-07-19

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AUSTRIA AG;

    申请/专利号DE20061002065

  • 发明设计人 WILLMEROTH ARMIN;KAPELS HOLGER;

    申请日2006-01-16

  • 分类号H01L29/06;H01L29/78;

  • 国家 DE

  • 入库时间 2022-08-21 20:29:29

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