Component arrangement, has MOS transistor e.g. MOSFET, with field electrode that is arranged adjacent to drift zone, and charging circuit exhibiting rectifier unit that is switched between gate electrode of transistor and field electrode

摘要

The arrangement has a MOS transistor (10) e.g. MOSFET or insulated gate bipolar transistor (IGBT) with a field electrode (31) that is arranged adjacent to a drift zone (12) and insulated dielectrically opposite to the drift zone by a dielectric layer (32). A charging circuit (40) exhibits a rectifier unit (41) that is switched between a gate electrode (21) of the MOS transistor and the field electrode. The MOS transistor and a capacitive storage unit (42) of the charging circuit are integrated in a semiconductor body (100), where the capacitive storage unit is arranged in a trench.