Magnetoresistive transitions` forming method for use in magnetoresistive RAM cell production process, involves structuring mask layers to produce hard masks, removing polymer residues from masks, and etching structure of transition layers

摘要

The method involves depositing one of hard mask layers (6) on an etch blocking layer, and structuring and etching the mask layers for production of hard masks, so that the etching of the etch blocking layer is blocked. Polymer residues are removed from the hard masks and the etch blocking layer is etched. A layer structure of the magnetoresistive transition layers is etched for production of a magnetoresistive transition (13). The material of the etch stopping layer is selected from a group of ruthenium (Ru), tantalum nitrate (TaN) and tungsten nitrate (WN).