Semiconductor component for power uses has super blocking arrangement having alternating first and second type dopant layers between substrate and channel

摘要

A semiconductor component comprises a semiconductor substrate (1) of a first dopant type and a channel (4) of second dopant type with blocking layers between them (2,3). These comprise many alternating regions of first (2) and second (3) dopant types in a direction parallel to the principal substrate surface. The semiconductor regions with second type dopant have a higher impurity concentration than those of the first type. Independent claims are also included for the following: (A) A semiconductor component as above having a trench structure;and (B) A production process for the above.