首页> 外国专利> Semiconductor-layer structure useful in optoelectronic component, comprises a super lattice out of alternating piled layers of a first and a second type

Semiconductor-layer structure useful in optoelectronic component, comprises a super lattice out of alternating piled layers of a first and a second type

机译:可用于光电组件的半导体层结构,包括第一和第二类型的交替堆积层中的超晶格

摘要

The semiconductor-layer structure useful in optoelectronic component, comprises a super lattice (9) out of alternating piled layers of a first and a second type (b). The piled layers are III-V connection semiconductor. An element differs in super lattice adjoining layers of different types. In the super lattice, two layers of the same type have a different content (C Al, C In) at the element. The content is placed on the element within a layer of the lattice. The layer of the super lattice is doped with different doping substances in given concentration. The semiconductor-layer structure useful in optoelectronic component, comprises a super lattice (9) out of alternating piled layers of a first and a second type (b). The piled layers are III-V connection semiconductor. An element differs in super lattice adjoining layers of different types. In the super lattice, two layers of the same type have a different content (C Al, C In) at the element. The content is placed on the element within a layer of the lattice. The layer of the super lattice is doped with different doping substances in given concentration. The super lattice has alternating piled layers of (In xAl yGa 1 - x - y and In wAl zGa 1 - w - zN with 0= x, y, w, z= 1 and x+y= 1 and w+z= 1), (In xAl yG 1 - x - yP and In wAl zGa 1 - w - z with 0= x, y, w, z= 1) or (In xAl yGa 1 - x - yAs and In wGa 1 - w - zAs with 0= x, y, w, z= 1 and x+y= 1 and w+z= 1). In the single layer of the super lattice, a vertical position is assigned within the semiconductor-layer structure and the content of the element in a layer is dependent on its vertical position within the structure in given manner. The dependence of the content is purported for the layer of the first type through a first function, for the layer of the second type through a second function and/or for all layers through common function. The first, second and/or common function is a variable function, monotonous ascending/descending function, linear function, polynomial function, exponential function, logarithmic function, periodic function and/or a super position of the named function or its parts. The content at the element is constant within the layer of the super lattice. The layers of the different type have different thickness. An independent claim is included for an optoelectronic component.
机译:可用于光电子部件的半导体层结构包括第一和第二类型的交替堆叠层(b)中的超晶格(9)。堆积层是III-V连接半导体。元素在不同类型的超晶格邻接层中有所不同。在超晶格中,两个相同类型的层在元素上的含量不同(C Al,C In)。内容放置在晶格层中的元素上。在给定浓度下,超晶格层掺杂有不同的掺杂物质。可用于光电子部件的半导体层结构包括第一和第二类型的交替堆叠层(b)中的超晶格(9)。堆积层是III-V连接半导体。元素在不同类型的超晶格邻接层中有所不同。在超晶格中,两个相同类型的层在元素上的含量不同(C Al,C In)。内容放置在晶格层中的元素上。在给定浓度下,超晶格层掺杂有不同的掺杂物质。超晶格具有(In xAl yGa 1-x-y和In wAl zGa 1-w-zN的交替堆积层,其中0 = x,y,w,z = 1和x + y = 1且w + z = 1 ),(In xAl yG 1-x-yP和In wAl zGa 1-w-z,其中0 = x,y,w,z = 1)或(In xAl yGa 1-x-yAs和In wAl 1-ga-w-具有0 = x,y,w,z = 1和x + y = 1和w + z = 1的zAs)。在超晶格的单层中,在半导体层结构中分配了垂直位置,并且层中元素的含量以给定方式取决于其在结构中的垂直位置。对于第一类型的层,通过第一功能,对于第二类型的层,通过第二功能和/或对于所有层,通过公共功能,声称内容的依赖性。第一,第二和/或公共函数是变量函数,单调上升/下降函数,线性函数,多项式函数,指数函数,对数函数,周期函数和/或命名函数或其部分的上位。元素的含量在超晶格层内是恒定的。不同类型的层具有不同的厚度。光电组件包括独立权利要求。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号