Hard masking layer stack for use in semiconductor memory device, has carbon layer arranged on layer to be structured, and covering layer arranged on intermediate layer, where intermediate layer is thicker than covering layer

摘要

The stack has a carbon layer (81) that is arranged on a layer to be structured, and an intermediate layer (83) that is arranged on the carbon layer. A covering layer (82) is arranged on the intermediate layer, where the intermediate layer is thicker than the covering layer. A photoresistant layer is arranged in contact with the covering layer, and the carbon layer has holes in an intermediate area between structures in the layer to be structured, where the stack has a thickness larger than 100 nanometer. Independent claims are also included for the following: (1) a method for structuring a layer (2) a method for manufacturing an integrated circuit.