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VAPOR DEPOSITION METHOD FOR FORMING THIN FILM ON WAFER, AND VAPOR DEPOSITION APPARATUS FOR FORMING THIN FILM ON WAFER
VAPOR DEPOSITION METHOD FOR FORMING THIN FILM ON WAFER, AND VAPOR DEPOSITION APPARATUS FOR FORMING THIN FILM ON WAFER
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机译:在晶片上形成薄膜的气相沉积方法,以及在晶片上形成薄膜的气相沉积装置
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摘要
PROBLEM TO BE SOLVED: To provide a vapor deposition method which can form a vapor deposition thin film while more precisely controlling temperatures of a wafer surface and a susceptor surface without increasing a cost more than necessary, and to provide a vapor deposition apparatus therefor.;SOLUTION: The vapor deposition method for forming the thin film on the wafer 5 is used for forming the thin film on the wafer 5 mounted on a susceptor 6, and comprises the steps of: continually measuring at least temperatures of the wafer surface on the rotating susceptor 6 and the susceptor surface; extracting the temperatures of the wafer surface and/or the susceptor surface separately from the measured temperature data of the wafer surface and the susceptor surface, on the basis of predetermined changing rates of the temperatures; and forming the vapor deposition thin film while controlling the temperatures of the wafer surface and/or the susceptor surface based on the extracted temperatures of the wafer surface and/or the susceptor surface.;COPYRIGHT: (C)2008,JPO&INPIT
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