GaN-BASED FIELD EFFECT TRANSISTOR HAVING HIGH ELECTRON MOBILITY

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based field effect transistor in which cracks on the surface of an AlN barrier layer is prevented and forward voltage Vf characteristic is improved.;SOLUTION: An AlGaN/GaN-HEMT has an AlN template 21 having an AlN layer 21b formed on a growing substrate such as a sapphire substrate 21a, a GaN channel layer 22 epitaxially grown on the AlN template 21, and a layer of a sandwich structure formed on the GaN channel layer 22. The layer of the sandwich structure is formed of a lower Al_xGa_1-xN barrier layer 23, an intermediate AlN barrier layer 24 having ≥2 nm thickness and an upper Al_xGa_1-xN cap layer 25.;COPYRIGHT: (C)2008,JPO&INPIT