MANUFACTURING METHOD OF GROUP III NITRIDE SUBSTRATE, GROUP III NITRIDE SUBSTRATE, GROUP III NITRIDE SUBSTRATE WITH EPITAXIAL LAYER, GROUP III NITRIDE DEVICE, MANUFACTURING METHOD OF GROUP III NITRIDE SUBSTRATE WITH EPITAXIAL LAYER, AND MANUFACTURING METHOD OF GROUP III NITRIDE DEVICE

摘要

PROBLEM TO BE SOLVED: To increase the ratio of nondefective products by improving the flatness of a group III nitride wafer with stripe structure after the wafer is polished, by reducing surface roughness and eliminating surface dropping, because the finishing state of grinding and polishing significantly varies depending on adhesion to a wafer polishing plate when grinding and polishing one surface of a group III nitride substrate crystal having the stripe structure where a crystal defect assembly area H and a low defect single crystal area Z in linearly parallel manner, or a crystal defect assembly area H and a low defect single crystal area Z, and a C surface growth area Y, are replaced.;SOLUTION: A polishing platen with a pad of compression rate of 1-15% is used to radially bond a plurality of the stripe type group III nitride substrates to an abrading holder K so that a stripe structure S direction is perpendicular to rotation direction G. A pressure to be applied to a wafer W by the abrading holder K is set at 100 g/cm²-1,500 g/cm², and the stripe type group III nitride wafer is polished while a polishing liquid at pH of 1-12 is being supplied, and the abrading holder and the polishing platen are being rotated.;COPYRIGHT: (C)2008,JPO&INPIT