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TIN OXIDE FILM FORMER, TIN OXIDE FILM FORMATION METHOD USING IT, AND TIN OXIDE FILM FORMED BY IT

机译:氧化锡膜的形成方法,使用该方法的氧化锡膜的形成方法以及由该方法形成的氧化锡膜

摘要

PROBLEM TO BE SOLVED: To provide a tin oxide film former capable of forming a tin oxide film at low temperatures.;SOLUTION: This tin oxide film former contains at least one kind out of organic tin compounds comprising: (1) a compound formed of one tin atom bonded to (p) organic groups each having a double bond at the β-position (when p is 2-4, the organic groups are identical or different from one another), any one kind within (m) halogen atoms, hydroxyl groups, alkoxy groups and acyloxy groups, and any one kind within (n) halogen atoms, hydroxyl groups, alkoxy groups and acyloxy groups (p is an integer of 1-4, m and n are each an integer of 0-3, and p+m+n=4); (2) a compound formed of one tin atom bonded to two organic groups each having a double bond at the β-position, and an oxygen atom bonded by one double bond; and (3) a compound formed of one tin atom bonded to one organic group having a double bond at the β-position, an oxygen atom bonded by one double bond, and one hydroxyl group; wherein the organic groups in (1), (2) and (3) are identical or different from one another.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种能够在低温下形成氧化锡膜的氧化锡膜形成剂。解决方案:该氧化锡膜形成剂包含有机锡化合物中的至少一种,所述有机锡化合物包括:(1)由以下物质形成的化合物:一个与(p)个有机基团相连的锡原子,每个有机基团在β位具有双键(当p为2-4时,有机基团彼此相同或不同),在(m)个卤素原子内的任何一种,羟基,烷氧基和酰氧基,以及在(n)个卤素原子内的任何一种,羟基,烷氧基和酰氧基(p是1-4的整数,m和n分别是0-3的整数,并且p + m + n = 4); (2)一种化合物,该化合物由与两个有机基团键合的一个锡原子和两个通过一个双键键合的氧原子组成,所述有机基团各自在β位具有双键; (3)一种化合物,该化合物由与在β位具有双键的一个有机基团键合的一个锡原子,通过一个双键键合的氧原子和一个羟基形成。其中(1),(2)和(3)中的有机基团相同或不同。;版权:(C)2008,日本特许经营&INPIT

著录项

  • 公开/公告号JP2008091215A

    专利类型

  • 公开/公告日2008-04-17

    原文格式PDF

  • 申请/专利权人 NITTO KASEI CO LTD;

    申请/专利号JP20060270898

  • 发明设计人 OKADA TAKAYUKI;SASAOKA SHINICHI;

    申请日2006-10-02

  • 分类号H01B13/00;C01G19/02;H01B5/14;

  • 国家 JP

  • 入库时间 2022-08-21 20:23:26

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