MULTIVALUED-RECORDING PHASE-CHANGE MEMORY ELEMENT, MULTIVALUED-RECORDING PHASE-CHANGE CHANNEL TRANSISTOR, AND MEMORY CELL ARRAY

摘要

PROBLEM TO BE SOLVED: To provide a multivalued-recording phase-change memory element with a new structure that allows to stably execute recording of multivalued information, and also, to highly reliably execute information reproduction.;SOLUTION: The multivalued-recording phase-change memory element is provided with a first electrode layer (26), a second electrode layer (28), and a memory layer (30) that is provided between the first/second electrode layers (26, 28) and has a layer which is made of a phase-change material and stabilized in an amorphous phase and in a crystal phase at a room temperature. The memory layer (30) includes a plurality of partial memory layers (32, 34, 36, and 38) that are separated from each other between the first/second electrode layers (26, 28).;COPYRIGHT: (C)2008,JPO&INPIT