Semiconductor structure and the method of forming that (through the adhesion of metallic oxide, the nitrogen content field-effect transistor gate stack which includes the threshold variable voltage control layer which was formed)

摘要

Topic There are times when the semiconductor structure which includes V _t stabilization layer with the gate dielectric and the gate electrode is offered.Solutions As for V _t stabilization layer, threshold voltage and flat band voltage of structure it is possible, nitriding metallic oxide or nitrogen is not to include metallic oxide, to be stabilized in set point, V _t stabilization layer nitrogen is not the semiconductor baseplate or inside the gate dielectric one side includes nitrogen at least under the conditions for including metallic oxide. In addition, this invention offers also the method of forming this kind of structure. Selective figure Figure 6