The integrated circuit which installs method, and the said transistor which produce the horizontal trench field-effect transistor and the said transistor in the semi-conducting material of the wide band gap

摘要

The connecting field-effect transistor is stated. This transistor is made from semiconductor of the wide band gap. The above-mentioned device, includes the layer and the p type fill gate territory or the Schottky gate territory of the semiconductor of the source, the channel, the drift and the drain. The above-mentioned source, the channel, the drift and drain layer can grow to epitaxial. The above-mentioned source, the ohmic contact for the gate and the drain territory can be formed by the same side as the wafer. The above-mentioned device depends on vertical channel width to possess the threshold voltage which differs, it can be executed vis-a-vis profit and the same channel doping, vis-a-vis the both of depression operational mode and enhancement operational mode. The above-mentioned device, digital, analog and monolithic can be used because of the microwave integrated circuit. Also the method of producing the transistor and the integrated circuit which include the above-mentioned device is stated and.