SEMICONDUCTOR PHOTODETECTOR, LIGHT RECEIVING MODULE AND MANUFACTURING METHOD OF SEMICONDUCTOR PHOTODETECTOR

摘要

PROBLEM TO BE SOLVED: To solve a problem that the outer diameter of a mirror or a light receiving diameter is smaller than the inside diameter of first mesa in a rear surface incidence type avalanche photodiode (APD) and a front surface incidence type APD whereby an element capacitance is necessitated to be reduced in order to improve the response speed of the APD.;SOLUTION: The mesa 110, consisting of a plurality of semiconductor crystal layers comprising pn conjunction consisting of the semiconductor crystal layer of a first conduction type and a second conduction type semiconductor crystal layers while comprising a first contact layer 108 in the upper part thereof, is formed on the semiconductor substrate 101, then, a plurality of electrodes for impressing electric field on the pn conjunction are connected while a second contact layer 108a is formed on an embedding layer 111 for embedding the mesa to impress the electric field on the pn conjunction through the second contact layer 108a and the first contact layer 108 in the semiconductor photodetector.;COPYRIGHT: (C)2009,JPO&INPIT