Removal of high-dose ion-implanted photoresist using a self-assembled monolayer of solvent system

摘要

We have developed a (SAM)-containing compositions self-assembled monolayer and method for removing a hardened photoresist material from the bulk and micro-electronic devices. One solvent, and one catalyst, and the two components SAM 1, SAM-containing composition comprises a surfactant and optionally at least at least. In one step process, SAM-containing composition, to passivate the silicon-containing layer of the lower layer and at the same time effectively remove the hardened photoresist material.