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METHOD OF MANUFACTURING HIGH DENSITY AlN-SiC-MeB COMBINED SINTERED COMPACT

机译:高密度AlN-SiC-MeB复合烧结体的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing high density AlN-SiC-MeB combined sintered compact by which sintering is carried out by about 200°C lowered temperature to reduce the manufacture cost and to easily use hot pressing (HP) or spark plasma sintering (SPS) which is a high degree sintering apparatus to be industrially manufactured and to improve economical effect though a conventional method of manufacturing AlN, SiC, metal borate combined ceramic requires high temperature sintering to make the industrial manufacture difficult.;SOLUTION: A composition or compound containing B and C or Al, B and C (AlBC-based sintering aid) is effective for the sintering of combined ceramic of AlN, SiC and metal borate to remarkably lower the sintering temperature. The addition of the AlBC-based sintering aid in this way is sufficiently densifying at 2,000°C and when using the HP or SPS sintering method, the sintering can be carried out at 1,850°C though sintering temperature requires ≥2,000°C when the sintering aid is not used.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种制造高密度AlN-SiC-MeB复合烧结体的方法,通过该方法将烧结温度降低约200℃,以降低制造成本并易于使用热压(HP)或火花等离子烧结(SPS)是一种工业化生产的烧结设备,旨在提高经济效益,尽管传统的AlN,SiC,金属硼酸盐复合陶瓷的制造方法需要高温烧结,以使其难以工业生产。含有B和C或Al的组合物或化合物,B和C(AlBC基烧结助剂)对于烧结AlN,SiC和金属硼酸盐的组合陶瓷是有效的,以显着降低烧结温度。以这种方式添加基于AlBC的烧结助剂在<2,000℃下充分致密化,并且当使用HP或SPS烧结方法时,尽管烧结温度需要≥2,000℃,但是烧结可以在1,850℃下进行。 ; C,当不使用烧结助剂时。;版权所有:(C)2008,JPO&INPIT

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