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Seed crystal and seed crystal holder for high quality growth of large-sized silicon carbide monocrystal

机译:用于大型碳化硅单晶高质量生长的晶种和晶种支架

摘要

The silicon carbide seed crystal sublimation growth system and related method are disclosed. The system of this invention, in the crucible and the crucible the silicon carbide source composition, in order in the crucible to promote the steam transport with silicon carbide seed crystal, the raw materials composition and seed crystal on the seed crystal holder and the seed crystal holder, demarcates main growth direction with the raw materials composition and seed crystal, way the macroscopic growth surface of expedient, and the seed crystal which generate main temperature gradient in the crucible, angle of approximately 70 degree - 89.5 degrees is formed vis-a-vis main temperature gradient and main growth direction, at the same time, the seed crystal which possesses c axis of crystalIn order crystallography orientation, main temperature gradient to form the angle of approximately 0 degree - 2 times, the fact that seed crystal is arranged on the seed crystal holder is included.
机译:公开了碳化硅籽晶升华生长系统和相关方法。本发明的系统,在坩埚和坩埚中,碳化硅源组成是为了在坩埚中促进与碳化硅晶种,籽晶保持器和晶种上的原料组成和晶种的蒸汽传输。支架,用原料成分和晶种划分主要生长方向,形成权宜的宏观生长面,并在坩埚中产生主要温度梯度的晶种形成,其角度约为70度至89.5度。相对于主要温度梯度和主要生长方向,同时,具有晶体c轴的籽晶为了晶体学取向,主要温度梯度形成约0度-2倍的角度,籽晶排列在包括晶种支架。

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