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Silicon photomultiplier (improved) and cell for silicon photomultiplier

机译:硅光电倍增管(改进型)和用于硅光电倍增管的电池

摘要

Topic Atomic nucleus technology, it is possible to use with laser technical field and tomography etc for industry and medical application, the detector which detects the light which includes the visible optical territory at high efficiency is offered.SolutionsAs for this invention, atomic nucleus technology, it is possible in regard to the optical recording detector of high efficiency, to use with laser technical field and tomography etc for industry and medical application. The silicon photomultiplier of this invention (1st execution form), it has the baseplate of p++ electric conduction type of 1018 - 1020 cm-3 doping density, the aforementioned multiplication tube consists of the plural cells. It has with the epitaxial layer of the p electric conduction type where each cell 1018 - 1014 cm has change possible doping density gradually with-3, grew on the aforementioned baseplate and the layer of the p electric conduction type where has 1015 - 1017 cm-3 doping density and the layer of the n+ electric conduction type where has 1018 - 1020 cm-3 doping density, the polysilicon resistant department which connects with the layer and the supply bar of the aforementioned n+ electric conduction type is arranged with respect to silicon dioxide layer of each cell, the separated part is arranged between the cells. The aforementioned silicon photomultiplier (2nd execution form), it has the baseplate of the n electric conduction type where layer of p++ electric conduction type of 1018 - 1020 cm-3 doping density was formed. This multiplication tube consists of the plural cells, in each cell, the polysilicon resistant department is arranged with respect to silicon dioxide layer, in addition, the separated part is arranged between the cells. Selective figure Figure 2
机译:<主题>原子核技术,可以与激光技术领域和层析成像等一起用于工业和医学应用,提供了一种能够高效检测包括可见光学区域的光的检测器。解决方案对于本发明,原子核对于高效率的光学记录检测器技术,可以与激光技术领域和层析成像等一起用于工业和医学应用。本发明的硅光电倍增管(第一实施方式),具有p + 1导电型的p ++导电型的基板,掺杂浓度为1018〜1020cm -3 ,上述倍增管由多个单元构成。它具有p导电类型的外延层,其中每个单元1018-1014 cm随着 -3逐渐改变可能的掺杂密度,在上述基板和p导电类型的层上生长掺杂浓度为1015-1017 cm -3 且掺杂浓度为1018-1020 cm -3 的n +导电层,连接多晶硅的电阻部相对于每个电池的二氧化硅层设置上述n +导电型的层和供给棒,将分离部分设置在电池之间。上述的硅光电倍增管(第二实施方式)具有n导电型的基板,在该基板上形成有p + +导电型的掺杂浓度为1018〜1020cm -3 的层。该倍增管由多个单元组成,在每个单元中,相对于二氧化硅层设置多晶硅耐性部,另外,在单元之间设置分离部分。<选择图>图2

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