SEMICONDUCTOR SATURABLE ABSORBER MIRROR, METHOD OF MANUFACTURING SEMICONDUCTOR SATURABLE ABSORBER MIRROR, LASER BEAM GENERATOR AND LASER BEAM APPLYING SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor saturable absorber mirror which has polarization axis dependence of a beam absorbing characteristic and provides a stable polarizing characteristic, and also to provide a laser beam generator using the semiconductor saturable absorber mirror.;SOLUTION: The semiconductor saturable absorber mirror is produced by allowing a reflection mirror layer 12 made of DBR to grow on an inclined substrate 11 and also by allowing a semiconductor quantum well layer 13 on the mirror layer to grow as a saturable absorbing layer including a strained quantum well. An asymmetric strain is produced in the surface of the strained quantum well of the semiconductor quantum well layer 13. A GaAs substrate, an InP substrate, a GaN substrate, an Al₂O₃ substrate, or the like is used as the inclined substrate 11. The semiconductor saturable absorber mirror is used for a resonator mirror of the laser beam generator.;COPYRIGHT: (C)2008,JPO&INPIT