Life time shortening of the formation carrier by the Raman laser which is based on the semiconductor and two photon absorption in the semiconductor guided wave road for the amplifier

摘要

The Raman laser to which the life time of the formation carrier due to two photon absorption was shortened, is based on the semiconductor and/or the amplifier is offered. The device which you follow the execution form of this invention has the diode structure which is arranged in the optical waveguide, and the optical waveguide which are arranged in the semi-conducting material. The optical waveguide, 1st wave length and the 1st light beam which possesses 1st power level absorbing light, in order to bring the discharge of the 2nd light beam of 2nd wave length inside the said semiconductor guided wave road, is connected to the pump laser. Diode structure is biased, in order inside the optical waveguide to sweep the free carrier which is formed according to two photon absorption from the optical waveguide.