The luminous element, and the quantum well structure where method and the maximum modulating speed which improve the maximum modulating speed of the luminous element are improved

摘要

The barrier layer of Al _xGa1-xAs (610 and 650) it forms the method of this invention, the quantum well layer of InGaAs (630) forms between the barrier layer, boundary layer (620) it includes the fact that it forms between quantum well layer and each barrier layer. Selective figure Figure 4