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Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof
Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof
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机译:增大发光器件的最大调制速度的方法,以及具有增大的最大调制速度的发光器件及其量子阱结构
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摘要
The method comprises forming barrier layers of AlxGa1-xAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.
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机译:该方法包括形成Al x Sub> Ga 1-x Sub> As的势垒层,在势垒层之间形成InGaAs的量子阱层,以及在量子阱之间形成界面层。层和每个阻挡层。
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