Being chemical vapor phase growth manner of the metal nitride film which possesses the process which forms the metal nitride film

摘要

PROBLEM TO BE SOLVED: To form a metal nitride film with good step coverage on a substrate having steps with large differences of surface levels by producing plasma in a mixed gas containing a metal compd., a nitriding agent and a reducing agent under such conditions that the main emission spectral intensity of the metal ion is larger than that of the metal atom. ;SOLUTION: A substrate stage 2 on which a substrate 1 to be treated is mounted is placed in a CVD chamber 6 equipped with a ventilation hole 8. Microwaves are introduced through a quartz window 9 facing to the substrate into a plasma producing room 11 on which a magnetic field is applied by a solenoid coil 10. A mixed gas of H₂, N₂ and Ar and a metal compd. are supplied through inlet holes 4, 5 to produce plasma. Further a mirror magnetic field is produced on the substrate 1 by an electromagnet 12 to apply ions or the like in the plasma perpendicular to the surface of the substrate 1. The emission spectrum of the plasma are observed by a plasma monitor 13. The metal nitride film is formed in such a metal compd. gas/mixed gas flow amt. ratio that the main emission spectral intensity of the metal ion observed in the monitor is larger than the spectral intensity of the metal atom.;COPYRIGHT: (C)1999,JPO