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The baseplate compared to low the semiconductor device which possesses the spacer layer which is doped with the spread atom
The baseplate compared to low the semiconductor device which possesses the spacer layer which is doped with the spread atom
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机译:相比之下,底板的半导体器件成本较低,该半导体器件具有掺杂有扩散原子的隔离层
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摘要
A semiconductor device includes a silicon substrate heavily-doped with phosphorous. A spacer layer is disposed over the substrate and is doped with dopant atoms having a diffusion coefficient in the spacer layer material that is less than the diffusion coefficient of phosphorous in silicon. An epitaxial layer is also disposed over the substrate. A device layer is disposed over the substrate, and over the epitaxial and spacer layers.
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