Among the said defects where production

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer, having extremely few defects in an epitaxial film and high gettering ability in a bulk portion.;SOLUTION: In this method of manufacturing an epitaxial wafer, an epitaxial film is formed on a single-crystal substrate, in which grown-in defects are plate- like or rod-like and the density of the defects existing on the surface, which are 0.12 μm or greater in length on a (100) plane is 0.3/cm2 or smaller.;COPYRIGHT: (C)2002,JPO