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Photoelectric cell, coating liquid for forming metal oxide semiconductor film, and method for producing metal oxide semiconductor film for photoelectric cell

机译:光电电池,用于形成金属氧化物半导体膜的涂布液以及用于制造光电电池的金属氧化物半导体膜的方法

摘要

PROBLEM TO BE SOLVED: To provide a photoelectric cell having a high adsorption quantity of a photosensitizer, high reactive activity, smooth transfer of an electron in a semiconductor, and enhanced photoelectric transfer efficiency. SOLUTION: In this photoelectric cell, a substrate having an electrode layer 1 on its surface, while a metal oxide semiconductor layer 2 adsorbing a photosensitizer is formed on the surface of the electrode layer 1, and a substrate having an electrode layer 3 on its surface are disposed so that the electrode layer 1 faces the electrode layer 3, and an electrolyte layer is provided between the metal oxide semiconductor layer 2 and the electrode layer 3. At least either one of the substrates and the electrodes is transparent, and the metal oxide semiconductor layer 2 contains a titanium oxide particle containing a brookite type crystal in this photoelectric cell.
机译:解决的问题:提供一种具有高光敏剂吸附量,高反应活性,电子在半导体中的平稳转移以及增强的光电转移效率的光电电池。解决方案:在此光电电池中,在其表面上具有电极层1的基板,而在电极层1的表面上形成了吸附有光敏剂的金属氧化物半导体层2,并且在其表面上具有电极层3的基板电极层1以与电极层3相对的方式配置,在金属氧化物半导体层2与电极层3之间设置电解质层。基板和电极中的至少一方是透明的,金属氧化物半导体层2在该光电电池中包含含有板钛矿型晶体的氧化钛颗粒。

著录项

  • 公开/公告号JP4077594B2

    专利类型

  • 公开/公告日2008-04-16

    原文格式PDF

  • 申请/专利权人 触媒化成工業株式会社;

    申请/专利号JP20000153110

  • 发明设计人 小 柳 嗣 雄;小 松 通 郎;

    申请日2000-05-24

  • 分类号H01M14;H01L31/04;

  • 国家 JP

  • 入库时间 2022-08-21 20:18:21

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