Production mannered null multiple deep p forma well

摘要

PROBLEM TO BE SOLVED: To provide a fit-in type flash memory cell structure which performs writing and deleting via a channel, and a method of manufacturing the same. SOLUTION: A CMOS device and a flash memory cell are combined, and a flash memory structure and the CMOS device are fabricated on a base at the same time to reduce manufacturing costs and processes. Furthermore, the CMOS device reserves functions for both high- and low-voltage operations to effectively improve the operation efficiency between the flash memory cell and the CMOS device. Thus a total deposit thereof is smaller than when they are separately fabricated before being combined.