The copper foundation film formation material, copper foundation film formation manner, the copper foundation film formation material which features

摘要

PROBLEM TO BE SOLVED: To provide a copper base film forming material wherein diffusion of copper can be prevented when thickness is reduced as compared with the conventional barrier metal and adhesiveness to a copper wiring film is superior, a copper base film forming method, a copper base film and a semiconductor device.;SOLUTION: The copper base film formation material contains the compound expressed by the following general formula [I]; the copper base film forming method using the material; the copper base film formed by the method; and a semiconductor device provided with a substrate, the base film, and a copper wiring film. The general formula is (R₁R₂)P-(R)_n-Si(X₁X₂X₃). In the general formula [1], at least one of X₁, X₂ and X₃ is radical of hydrolysis nature. R1 and R2 are alkyl radical. R is alkylene group, aromatic ring or bivalent chain organic group formed of alkylene group containing aromatic ring, and n is an integer of 1-6.;COPYRIGHT: (C)2004,JPO&NCIPI