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Irradiating the thin film null pulse laser which is produced with production manner and the same manner of the crystal thin film of the diamond

机译:照射与金刚石的晶体薄膜的制造方法和方法相同的薄膜零脉冲激光

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a crystalline thin film of diamond such as a hetero-epitaxial thin film, and to provide a thin film manufactured by the method.;SOLUTION: In the method for manufacturing a crystalline thin film, an epitaxial, a uniaxially oriented, or a polycrystalline thin film of diamond is formed on a monocrystalline substrate made of sapphire, SrTiO3, or the like other than diamond, which do not react with SiC and a substrate holder, by using an SiC target, using a substrate heating mechanism capable of heating the substrate to such a high temperature as in the region of 1,000°C, and using a film forming method employing a pulse laser abrasion method applying a pulse laser having a pulse width shorter than sub-nanosecond. A hetero-epitaxial thin film, a uniaxially oriented thin film, and a polycrystalline thin film of diamond are manufactured on the surfaces of those substrates by using the method for manufacturing the crystalline thin film.;COPYRIGHT: (C)2004,JPO&NCIPI
机译:解决的问题:提供一种制造金刚石的结晶薄膜的方法,例如异质外延薄膜,并提供通过该方法制造的薄膜。;解决方案:在该制造结晶薄膜的方法中,在由蓝宝石,SrTiO 3 等制成的单晶基板上形成金刚石的外延,单轴取向或多晶金刚石薄膜,该单晶基板上除了金刚石之外不与SiC和基板反应通过使用SiC靶,使用能够将基板加热至大约1000℃左右的高温的基板加热机构,以及使用具有脉冲激光磨蚀法的脉冲激光磨蚀法的成膜方法。小于亚纳秒的脉冲宽度。通过使用该晶体薄膜的制造方法,在这些衬底的表面上制造异质外延薄膜,单轴取向薄膜和金刚石的多晶薄膜。;版权所有:(C)2004,JPO&NCIPI

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