METHOD OF MANUFACTURING ENHANCEMENT TYPE SEMICONDUCTOR PROBE AND INFORMATION STORAGE DEVICE HAVING THE SEMICONDUCTOR PROBE USING THE SAME

摘要

A method of manufacturing an enhancement type semiconductor probe and an information storage device having the enhancement type semiconductor probe are provided. The method involves using an anisotropic wet etching and a side-wall in which influence of process parameters upon the performance of a device is reduced to improve reliability of the device in mass-production, and factors of degrading measuring sensitivity is removed to improve the performance of the device.