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PLANAR RADIATION DETECTOR USING RADIATION-INDUCED-CHARGE CONVERSION FILM OF AMORPHOUS SELENIUM

机译:非晶硒的辐射感应电荷转换膜的平面辐射探测器

摘要

In a planar radiation detector having a substrate; a charge-collection electrode; a radiation-induced-charge conversion film formed mainly of amorphous selenium; and an upper electrode which transmits radiation, or in a planar radiation detector having a substrate; a charge-collection electrode; a light-induced-charge conversion film which is formed mainly of amorphous selenium and generates electric charge when the light-induced-charge conversion film is irradiated with visible light which has passed through an upper electrode; the upper electrode which transmits the visible light emitted from a fluorescent layer; and the fluorescent layer formed of a fluorescent material which converts a radiation carrying image information into the visible light, the radiation-induced-charge conversion film or the light-induced-charge conversion film is formed of amorphous selenium or amorphous selenium alloy and has a residual oxygen concentration of 35 ppm or lower.
机译:在具有衬底的平面辐射探测器中;电荷收集电极;主要由非晶态硒形成的辐射诱导电荷转换膜;透射辐射的上电极,或在具有基板的平面辐射检测器中;电荷收集电极;一种光感应电荷转换膜,其主要由非晶态硒形成,并且当该光感应电荷转换膜被穿过上部电极的可见光照射时,会产生电荷。上电极透射从荧光层发射的可见光。并且,由将携带有图像信息的放射线转换为可见光的荧光体形成的荧光体层,放射线感应电荷转换膜或光感应电荷转换膜由非晶硒或非晶硒合金形成,具有残留氧浓度为35 ppm或更低。

著录项

  • 公开/公告号US2008224049A1

    专利类型

  • 公开/公告日2008-09-18

    原文格式PDF

  • 申请/专利权人 SHINJI IMAI;TOMOMASA SATO;

    申请/专利号US20080046088

  • 发明设计人 SHINJI IMAI;TOMOMASA SATO;

    申请日2008-03-11

  • 分类号G01T1/24;

  • 国家 US

  • 入库时间 2022-08-21 20:16:05

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