PHASE-CHANGE MEMORY DEVICE AND METHOD THAT MAINTAINS THE RESISTANCE OF A PHASE-CHANGE MATERIAL IN A SET STATE WITHIN A CONSTANT RESISTANCE RANGE

摘要

Provided are a phase-change memory device and method that maintains a resistance of a phase-change material in a set state within a constant resistance range; In the method, data is provided to a first phase-change memory cell and then it is first determined whether data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical. If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are not identical, a complementary write current is provided to the first phase-change memory cell and it is second determined whether the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical; If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical, data is provided to a second phase-change memory cell;