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Epitaxial growth of GaN and SiC on silicon using nanowires and nanosize nucleus methodologies
Epitaxial growth of GaN and SiC on silicon using nanowires and nanosize nucleus methodologies
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机译:使用纳米线和纳米尺寸核方法在硅上外延生长GaN和SiC
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摘要
A method of fabricating a continuous layer of a defect sensitive material on a silicon substrate includes preparing a silicon substrate; forming a nanostructure array directly on the silicon substrate; depositing a selective growth enhancing layer on the substrate; smoothing the selective growth enhancing layer; and growing a continuous layer of the defect sensitive material on the nanostructure array.
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