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PHOTOACTIVE MATERIALS CONTAINING BULK AND QUANTUM-CONFINED SEMICONDUCTOR STRUCTURES AND OPTOELECTRONIC DEVICES MADE THEREFROM
PHOTOACTIVE MATERIALS CONTAINING BULK AND QUANTUM-CONFINED SEMICONDUCTOR STRUCTURES AND OPTOELECTRONIC DEVICES MADE THEREFROM
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机译:包含大体积和量子限制的半导体结构以及由光电器件制成的光敏材料
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摘要
The present invention provides photoactive materials that include quantum-confined semiconductor nanostructures in combination with non-quantum confined and bulk semiconductor structures to enhance or create a type II band offset structure. The photoactive materials are well-suited for use as the photoactive layer in photoactive devices, including photovoltaic devices, photoconductors and photodetectors.
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