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Atomic layer deposition process for iridium barrier layers
Atomic layer deposition process for iridium barrier layers
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机译:铱阻挡层的原子层沉积工艺
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摘要
An iridium barrier and adhesion layer for use with copper interconnects within integrated circuits is formed using an atomic layer deposition (ALD) process. The ALD process uses an organometallic iridium precursor and at least one co-reactant.
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