首页>
外国专利>
MULTILAYER HARDMASK SCHEME FOR DAMAGE-FREE DUAL DAMASCENE PROCESSING OF SiCOH DIELECTRICS
MULTILAYER HARDMASK SCHEME FOR DAMAGE-FREE DUAL DAMASCENE PROCESSING OF SiCOH DIELECTRICS
展开▼
机译:SiCOH介电体的无损伤双大马士革多层加工方案
展开▼
页面导航
摘要
著录项
相似文献
摘要
Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.
展开▼