Method for manufacturing high-density indium tin oxide target, methods for preparing tin oxide powder and indium oxide powder used therefor

摘要

A method for manufacturing an indium tin oxide (ITO) target and methods for preparing indium oxide powder (In₂O₃) and tin oxide powder (SnO₂). The method for manufacturing an ITO (indium tin oxide) target includes preparing an In₂O₃ powder having a surface area of about 10-18 m²/g and an average particle diameter of between about 40 to 80 nm; preparing a SnO₂ powder having a surface area of about 8-15 m²/g and an average particle diameter of about 60-100 nm; molding a mixture of the In₂O₃ powder and the SnO₂ powder; and sintering the mixture at atmospheric pressure under oxidation atmosphere. The ITO target is applicable for a high-quality, transparent electrode for a display, such as a liquid crystal display, electroluminescent display, or field emission display.