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THERMAL ANNEAL METHOD FOR A HIGH-K DIELECTRIC
THERMAL ANNEAL METHOD FOR A HIGH-K DIELECTRIC
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机译:高介电常数的热退火方法
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摘要
A method of manufacturing a semiconductor device is provided. In one embodiment, the method provides for the formation, over a substrate, of a dielectric layer having a high dielectric constant. This dielectric layer may be exposed to a nitrogen plasma after which it may be annealed in a hydrogen containing ambient.
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