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MULTI-BIT HIGH-DENSITY MEMORY DEVICE AND ARCHITECTURE AND METHOD OF FABRICATING MULTI-BIT HIGH-DENSITY MEMORY DEVICES
MULTI-BIT HIGH-DENSITY MEMORY DEVICE AND ARCHITECTURE AND METHOD OF FABRICATING MULTI-BIT HIGH-DENSITY MEMORY DEVICES
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机译:多位高密度存储器设备和体系结构以及制造多位高密度存储器设备的方法
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摘要
A structure, memory devices using the structure, and methods of fabricating the structure. The structure includes: an array of nano-fins, each nano-fin comprising an elongated block of semiconductor material extending axially along a first direction, the nano-fins arranged in groups of at least two nano-fins each, wherein ends of nano-fins of each adjacent group of nano-fins are staggered with respect to each other on both a first and a second side of the array; wherein nano-fins of each group of nano-fins are electrically connected to a common contact that is specific to each group of nano-fins such that the common contacts comprise a first common contact on the first side of the array and a second common contact on the second side of the array; and wherein each group of nano-fins has at least two gates that electrically control the conductance of nano-fins of the each group of nano-fins.
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