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Method of fabricating a terbium-doped electroluminescence device via metal organic deposition processes
Method of fabricating a terbium-doped electroluminescence device via metal organic deposition processes
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机译:通过金属有机沉积工艺制造掺ped电致发光器件的方法
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摘要
A method of fabricating an electroluminescent device includes preparing a wafer and a doped-silicon oxide precursor solution. The doped-silicon oxide precursor solution is spin coated onto the wafer to form a doped-silicon oxide thin film on the wafer, which is baked at progressively increasing temperatures. The wafer is then rapidly thermally annealed, further annealed in a wet oxygen ambient atmosphere. A transparent top electrode is deposited on the doped-silicon oxide thin film, which is patterned, etched, and annealed. The doped-silicon oxide thin film and the wafer undergo a final annealing step to enhance electroluminescent properties.
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