DEGAS CHAMBER FOR FABRICATING SEMICONDUCTOR DEVICE AND DEGAS METHOD EMPLOYING THE SAME

摘要

A degas apparatus for fabricating a semiconductor device is provided. The degas apparatus includes a chamber into which a wafer is loaded, a heating unit, disposed within the chamber, for heating the wafer to activate impurities remaining on the wafer, and a vacuum suction unit for sucking gases within the chamber by means of vacuum suction to discharge the activated impurities on the wafer to the outside. The degas apparatus also includes a hydrogen supply unit for supplying a hydrogen (H₂) gas to the chamber, which is heated by the heating unit, to remove and/or prevent formation of a metal oxide layer on the wafer.