首页> 外国专利> Apparatus for generating light in the extreme ultraviolet and use in a light source for extreme ultraviolet lithography

Apparatus for generating light in the extreme ultraviolet and use in a light source for extreme ultraviolet lithography

机译:用于在极紫外光中产生光并用于极紫外光刻的光源的设备

摘要

The device comprises a device (2) for creating an essentially linear target (4) in an evacuated space where laser beams (1) are focused, the target being suitable for interacting with the focused laser beams (1) to emit a plasma emitting radiation in the extreme ultraviolet. A receiver device (3) receives the target (4) after it has interacted with the focused laser beams (1), and a collector device (110) collects the EUV radiation emitted by the target (4). The focusing elements (11) for focusing the laser beams on the target (4) are arranged in such a manner that the laser beams (1) are focused on the target (4) laterally, being situated in a common half-space relative to the target (4) and being inclined at a determined angle lying in the range about 60° to about 90° relative to a mean collection axis (6) perpendicular to the target (4). The collector device (110) is disposed symmetrically about the mean collection axis (6) in the half-space containing the laser beams (1) focused on the target (4) and inside a conical space (8) centered on the mean collection axis (6) with a vertex situated at the target (4) and a half-angle at the vertex that is less than the angle of inclination of the focused laser beams (1) relative to the mean collection axis (6). The device is suitable for use as a source for EUV radiation in lithography for fabricating integrated circuits.
机译:该设备包括一个设备( 2 ),该设备用于在真空(激光束​​( 1 )聚焦)中形成一个基本上线性的目标( 4 ) ,该靶适合与聚焦的激光束( 1 )相互作用以发射等离子辐射的极紫外光。接收器设备( 3 )在与聚焦的激光束( 1 )相互作用后接收目标( 4 ),而收集器设备( 110 )收集目标( 4 )发射的EUV辐射。用于将激光束聚焦在目标( 4 )上的聚焦元件( 11 )的排列方式应使激光束( 1 )侧向聚焦在目标( 4 )上,相对于目标( 4 )处于共同的半空间内,并以确定的角度倾斜相对于垂直于目标( 4 )的平均收集轴( 6 )的范围大约为60°至90°。收集器设备( 110 )围绕平均收集轴( 6 )对称放置在包含激光束( 1 )的半空间中集中在目标( 4 )上并在以平均收集轴( 6 )为中心的圆锥空间( 8 )内,顶点位于目标( 4 )和顶点处的半角小于聚焦激光束( 1 )相对于平均收集轴( 6 )。该器件适合用作光刻法中用于制造集成电路的EUV辐射源。

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