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Rewritable, nonvolatile memory, electronic device, method of rewriting rewritable, nonvolatile memory, and storage medium having stored thereon rewrite program

机译:可重写的非易失性存储器,电子设备,重写可重写的非易失性存储器的方法以及其上存储有重写程序的存储介质

摘要

A rewritable, nonvolatile memory includes a first region having stored therein a processing program which allows an electronic device to perform a process, and having a first specific portion which is accessed first upon boot-up by the electronic device; and a second region having stored therein a boot program and a rewrite program. Upon erasing storage contents of the first region, the storage contents of the first region are erased by the rewrite program such that a storage content of the first specific portion is erased last. Upon writing storage contents into the first region, new storage contents are written into the first region by the rewrite program such that a storage content of the first specific portion is written first.
机译:可重写的非易失性存储器包括:第一区域,在第一区域中存储有处理程序,该处理程序允许电子设备执行处理;并且具有第一特定部分,该第一特定部分在由电子设备启动时首先被访问;第二区域中存储有启动程序和重写程序。在擦除第一区域的存储内容时,通过重写程序来擦除第一区域的存储内容,使得最后擦除第一特定部分的存储内容。在将存储内容写入第一区域时,通过重写程序将新的存储内容写入第一区域,从而首先写入第一特定部分的存储内容。

著录项

  • 公开/公告号US7418542B2

    专利类型

  • 公开/公告日2008-08-26

    原文格式PDF

  • 申请/专利权人 ATSUSHI OGO;SHUHJI FUJII;

    申请/专利号US20050246788

  • 发明设计人 ATSUSHI OGO;SHUHJI FUJII;

    申请日2005-10-11

  • 分类号G06F12/00;G06F9/44;

  • 国家 US

  • 入库时间 2022-08-21 20:11:13

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