Loading data with error detection in a power on sequence of flash memory device

摘要

A method of performing a power on sequence for a flash memory includes applying device voltage to the flash memory and loading nonvolatile memory data and nonvolatile memory complementary data to a read data register and a read complementary data register, respectively. The nonvolatile memory data and the nonvolatile memory complementary data are compared with the read data register and the read complementary data register during the power on sequence, e.g., after initial power up or power on reset (POR). When the comparison determines a mismatch, the loading of the nonvolatile memory data and the nonvolatile memory complementary data to the read data register and the read complementary data register, respectively, is repeated.