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Loading data with error detection in a power on sequence of flash memory device
Loading data with error detection in a power on sequence of flash memory device
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机译:在闪存设备的开机顺序中通过错误检测加载数据
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摘要
A semiconductor device is provided to have two groups of nonvolatile memory cells, two groups of data registers and a compare circuit. Each of the two groups of the nonvolatile memory cells stores a set of predetermined data and a set of complementary data respectively. The two groups of data registers are respectively connected to the two groups of the nonvolatile memory cells. The compare circuit is connected to the two groups of the data registers, for performing a comparison to generate a compare result.
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