Process of making a III-V compound semiconductor heterostructure MOSFET

摘要

A method of forming a compound semiconductor device comprises forming a gate insulator layer overlying a compound semiconductor substrate, defining an active device region within the compound semiconductor substrate, forming ohmic contacts to the compound semiconductor substrate proximate opposite sides of the active device region, and forming a gate metal contact electrode on the gate insulator layer in a region between the ohmic contacts. The ohmic contacts having portions thereof that overlap with portions of the gate insulator layer within the active device region. The overlapping portions ensure an avoidance of an undesirable gap formation between an edge of the ohmic contact and a corresponding edge of the gate insulator layer.