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Method of measuring an effective channel length and an overlap length in a metal-oxide semiconductor field effect transistor
Method of measuring an effective channel length and an overlap length in a metal-oxide semiconductor field effect transistor
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机译:在金属氧化物半导体场效应晶体管中测量有效沟道长度和重叠长度的方法
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摘要
In a method of measuring an effective channel length and an overlap length, first to third metal-oxide semiconductor field effect transistors (MOSFETs) including first to third gate patterns, respectively, are formed on a substrate. A parasitic capacitance between the gate patterns and the substrate in the MOSFETs is determined based on first and second capacitances, which are measured by applying a first voltage between the gate patterns and the substrate. A second voltage is applied between the first gate pattern and the substrate in the first MOSFET and a third voltage between the third gate pattern and the substrate in the third MOSFET to measure capacitances. The capacitances are treated to obtain third and fourth capacitances excluding the parasitic capacitance. Overlap lengths of the gate patterns are obtained based on the third and fourth capacitances. Effective channel lengths of the gate patterns are obtained based on the overlap length.
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