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Memory architecture containing a high density memory array of semi-volatile or non-volatile memory elements
Memory architecture containing a high density memory array of semi-volatile or non-volatile memory elements
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机译:包含半挥发性或非易失性存储元件的高密度存储阵列的存储体系结构
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摘要
An architecture, and its method of formation and operation, containing a high density memory array of semi-volatile or non-volatile memory elements, including, but not limited to, programmable conductive access memory elements. The architecture in one exemplary embodiment has a pair of semi-volatile or non-volatile memory elements which selectively share a bit line through respective first electrodes and access transistors controlled by respective word lines. The memory elements each have a respective second electrode coupled thereto which in cooperation with the bit line access transistors and first electrode, serves to apply read, write and erase signals to the memory element.
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